

239000006143 cell culture media Substances 0.000 abstract description 2.OC()=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 abstract description 3 UIIMBOGNXHQVGW-UHFFFAOYSA-M buffer Substances.238000000708 deep reactive-ion etching Methods 0.000 claims description 2.229910052796 boron Inorganic materials 0.000 claims description 2.ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2.229910052785 arsenic Inorganic materials 0.000 claims description 2.RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic Chemical compound RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2.238000004519 manufacturing process Methods 0.000 claims description 3.229920005591 polysilicon Polymers 0.000 claims description 4.229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4.238000002513 implantation Methods 0.000 claims description 4.

239000010703 silicon Substances 0.000 claims description 8.229910052710 silicon Inorganic materials 0.000 claims description 8.XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8.229920002120 photoresistant polymer Polymers 0.000 claims description 11.230000005684 electric field Effects 0.000 claims abstract description 31.

